MPQ3762
40V,1.5A,750mW Through-Hole Transistor-Quad PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
1.25 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.4 V
Case Type
TO-116
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
550 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
900 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
1.5 A
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
35 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
80 pF
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
15 pF
Power Dissipation
1.7 W
Power Dissipation
1.25 W
Power Dissipation
3.2 W
Power Dissipation
750 mW
Storage Temperature (Tstg)
-55 — 150 °C
Turn Off Time (toff)
120 ns
Turn On Time (ton)
50 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 40V,1.5A,750mW Through-Hole Transistor-Quad PNP General Purpose Amplifier/Switch | Sleeve | 25 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Bond Wire | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| LSSGP079.PDF | Device Datasheet |
| Material Composition:TO-116 | Material Composition |
| Package Detail Document:TO-116 | Package Detail Document |
| Product EOL Notice:TO-116 CASE | Product EOL Notice |