Skip to main content
AEM

MPQ6502

30V,500mA,650mW Through-Hole Transistor-Quad 2 X NPN & 2 X PNP General Purpose Amplifier

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.3 V
Case Type
TO-116
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
30 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1400 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
200 MHz
DC Current Gain (hFE)
75 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
50 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
30 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
30 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
1.25 W
Power Dissipation
650 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
100 °C/W
Turn Off Time (toff)
225 ns
Turn On Time (ton)
30 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued30V,500mA,650mW Through-Hole Transistor-Quad 2 X NPN & 2 X PNP General Purpose AmplifierSleeve25PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Halogen FreeAnalytical Test Report
Analytical Test Report:Lead frameAnalytical Test Report
Analytical Test Report:Pure Tin Solder, SnAnalytical Test Report
MPQ6002.PDFDevice Datasheet
Material Composition:TO-116Material Composition
Package Detail Document:TO-116Package Detail Document
Product EOL Notice:TO-116 CASEProduct EOL Notice
Spice Model:Spice Model MPQ6502_NPNSpice Model
Spice Model:Spice Model MPQ6502_PNPSpice Model

Recently Viewed