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AEM

MPQ7053

250V,500mA,750mW Through-Hole Transistor-Quad 2 X NPN & 2 X PNP General Purpose Amplifier

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-116
Collector-Base Breakdown Voltage (BVCBO)
250 V
Collector-Base Cutoff Current (ICBO)
250 nA
Collector-Base Voltage
250 V
Collector-Emitter Breakdown Voltage (BVCEO)
250 V
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
250 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
35 x10³
DC Current Gain (hFE)
25 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
75 pF
Input Capacitance (Cib)
50 pF
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
1.7 W
Power Dissipation
1.25 W
Power Dissipation
3.2 W
Power Dissipation
750 mW
Storage Temperature (Tstg)
-55 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued250V,500mA,750mW Through-Hole Transistor-Quad 2 X NPN & 2 X PNP General Purpose AmplifierSleeve25PBFREE

Resources

ItemType
Analytical Test Report:Bond WireAnalytical Test Report
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:Halogen FreeAnalytical Test Report
Analytical Test Report:Lead frameAnalytical Test Report
Analytical Test Report:Pure Tin Solder, SnAnalytical Test Report
MPQ7053.PDFDevice Datasheet
Material Composition:TO-116Material Composition
Package Detail Document:TO-116Package Detail Document
Product EOL Notice:TO-116 CASEProduct EOL Notice

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