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MPS3704

30V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
0.5 — 1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
50 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
50 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
12 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active30V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500LEAD or TINNo
Active30V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo
Active30V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchTape & Reel2,000LEAD or TINNo

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