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MPS455

140V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
160 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
160 V
Collector-Emitter Breakdown Voltage (BVCEO)
140 V
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
140 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
100 — 300 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0065
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
15 pF
Peak Collector Current
2 A
Power Dissipation
1 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active140V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageBox2,500LEAD or TINNo
Active140V,1A,1W Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageBox2,000PBFREE

Resources

ItemType
Analytical Test Report:Copper Bonding WireAnalytical Test Report
Analytical Test Report:Copper WireAnalytical Test Report
Analytical Test Report:Epoxy AdhesiveAnalytical Test Report
Analytical Test Report:Green Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Halogen FreeAnalytical Test Report
Analytical Test Report:Lead FrameAnalytical Test Report
Analytical Test Report:Pure Tin Solder, SnAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
MPS455.PDFDevice Datasheet
Material Composition:TO-92Material Composition
Package Detail Document:TO-92Package Detail Document
Product Reliability Data:TO-92 Package ReliabilityProduct Reliability Data

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