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MPS5308

300mA,40V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
20000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1400 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current
50 mA
Continuous Collector Current
300 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
7 — 70 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
12 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
10 pF
Power Dissipation
400 mW
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active300mA,40V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonBox2,500LEAD or TINNo

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