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MPS6507

20V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Specifications

Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Voltage (VCEO)
20 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
700 MHz
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Voltage
3 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
2.5 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active20V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,500LEAD or TINNo
Active20V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorAmmo2,000LEAD or TINNo
Active20V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorTape & Reel2,000LEAD or TINNo

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