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MPS6515

25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
100 mA
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
250 — 500 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
3.5 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500LEAD or TINNo
Active25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo
Active25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchTape & Reel2,000LEAD or TINNo

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