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MPS6520

25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
400 MHz
Current Gain-Bandwidth Product (fT)
300 MHz
DC Current Gain (hFE)
200 — 400 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Output Capacitance (Cob)
3.5 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued25V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo

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