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MPS6534

40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
2000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
250 MHz
DC Current Gain (hFE)
90 — 270 x10³
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
6 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo
Active40V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchTape & Reel2,000LEAD or TINNo

Resources

ItemType
Analytical Test Report:Copper Bonding WireAnalytical Test Report
Analytical Test Report:Copper WireAnalytical Test Report
Analytical Test Report:Epoxy AdhesiveAnalytical Test Report
Analytical Test Report:Green Epoxy Molding CompoundAnalytical Test Report
Analytical Test Report:Halogen FreeAnalytical Test Report
Analytical Test Report:Lead FrameAnalytical Test Report
Analytical Test Report:Pure Tin Solder, SnAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
MPS6533-35.PDFDevice Datasheet
Material Composition:TO-92Material Composition
Package Detail Document:TO-92Package Detail Document
Product Reliability Data:TO-92 Package ReliabilityProduct Reliability Data

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