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MPS6652

40V,1A,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High Current

Specifications

Base-Emitter On Voltage (VBE(ON))
1.2 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
40 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
600 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
50 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
50 x10³
Delay Time (td)
25 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4 V
Fall Time (tf)
50 ns
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
50 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Rise Time (tr)
30 ns
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
250 ns
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active40V,1A,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentBox2,500LEAD or TINNo
Active40V,1A,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentAmmo2,000LEAD or TINNo
Active40V,1A,625mW Through-Hole Transistor-Small Signal (<=1A) PNP High CurrentTape & Reel2,000LEAD or TINNo

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