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MPS8097

40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.45 — 0.65 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
30 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Voltage (VCEO)
40 V
Continuous Collector Current
200 mA
DC Current Gain (hFE)
250 — 700 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
6 V
Equivalent Input Noise Voltage (eN)
32 nV/√Hz
HTS Code
8541.21.0095
Input Capacitance (Cib)
10 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
1 — 4 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
250 — 800 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Active40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo
Active40V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo

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