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MPSA12

500mA,20V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
1.4 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Emitter Breakdown Voltage (BVCES)
20 V
Collector-Emitter Cutoff Current (ICES)
0.1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCES)
20 V
Continuous Collector Current
500 mA
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
10 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active500mA,20V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonBox2,500LEAD or TINNo
Active500mA,20V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonAmmo2,000LEAD or TINNo
Active500mA,20V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonTape & Reel2,000LEAD or TINNo

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