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MPSA18

45V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.7 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
45 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
45 V
Collector-Emitter Breakdown Voltage (BVCEO)
45 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
45 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
500 x10³
DC Current Gain (hFE)
500 x10³
DC Current Gain (hFE)
500 — 1500 x10³
DC Current Gain (hFE)
400 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6.5 V
Emitter-Base Voltage
6.5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
6.5 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
1.5 dB
Output Capacitance (Cob)
3 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active45V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Active45V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000PBFREE
Active45V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseAmmo2,000LEAD or TINNo
Active45V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseTape & Reel2,000LEAD or TINNo

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