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MPSA28

500mA,80V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
80 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
80 V
Collector-Emitter Breakdown Voltage (BVCES)
80 V
Collector-Emitter Cutoff Current (ICES)
0.5 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1200 mV
Collector-Emitter Voltage (VCES)
80 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
125 MHz
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
10 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
12 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
12 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active500mA,80V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonBox2,500LEAD or TINNo
Active500mA,80V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonAmmo2,000LEAD or TINNo
Active500mA,80V Through-Hole Transistor-Small Signal (<=1A) NPN DarlingtonTape & Reel2,000LEAD or TINNo

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