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MPSA42

300V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High Voltage

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.9 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
300 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
300 V
Collector-Emitter Breakdown Voltage (BVCEO)
300 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
300 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
50 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
3 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active300V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageBox2,500LEAD or TINNo
Active300V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageBox2,000PBFREE
Active300V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageAmmo2,000LEAD or TINNo
Active300V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN High VoltageTape & Reel2,000LEAD or TINNo

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