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AEM

MPSA63

500mA,30V Through-Hole Transistor-Small Signal (<=1A) PNP Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
125 MHz
DC Current Gain (hFE)
10 x10³
DC Current Gain (hFE)
5 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
10 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
2.5 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active500mA,30V Through-Hole Transistor-Small Signal (<=1A) PNP DarlingtonAmmo2,000LEAD or TINNo
Active500mA,30V Through-Hole Transistor-Small Signal (<=1A) PNP DarlingtonAmmo2,000LEAD or TINNo
Active500mA,30V Through-Hole Transistor-Small Signal (<=1A) PNP DarlingtonTape & Reel2,000LEAD or TINNo
Active500mA,30V Through-Hole Transistor-Small Signal (<=1A) PNP DarlingtonTape & Reel2,000LEAD or TINNo

Resources

ItemType
MPSA62-66.PDFDevice Datasheet
Package Detail Document:TO-237Package Detail Document
Product EOL Notice:TO-237 TransisitorsProduct EOL Notice

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