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MPSA66
500mA,30V Through-Hole Transistor-Small Signal (<=1A) PNP Darlington
Specifications
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1500 mV
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
40 x10³
DC Current Gain (hFE)
75 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
8 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Output Capacitance (Cob)
2.5 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 500mA,30V Through-Hole Transistor-Small Signal (<=1A) PNP Darlington | Box | 2,500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Copper Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| MPSA62-66.PDF | Device Datasheet |
| Material Composition:TO-92 | Material Composition |
| Package Detail Document:TO-92 | Package Detail Document |
| Process Change Notice:CP707 replaced by CP727V | Process Change Notice |
| Product Reliability Data:TO-92 Package Reliability | Product Reliability Data |