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MPSD04
300mA,25V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington
Specifications
Case Type
TO-92
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Emitter Breakdown Voltage (BVCES)
25 V
Collector-Emitter Cutoff Current (ICES)
1 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCES)
25 V
Continuous Collector Current
300 mA
Current Gain-Bandwidth Product (fT)
100 MHz
DC Current Gain (hFE)
2000 x10³
DC Current Gain (hFE)
1000 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
10 V
Emitter-Base Voltage
10 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-55 — 150 °C
Power Dissipation
1.5 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 300mA,25V Through-Hole Transistor-Small Signal (<=1A) NPN Darlington | Box | 2,500 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Copper Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| LSSGP076.PDF | Device Datasheet |
| Material Composition:TO-92 | Material Composition |
| Package Detail Document:TO-92 | Package Detail Document |
| Product Reliability Data:TO-92 Package Reliability | Product Reliability Data |