Skip to main content
AEM
No image available

MPSH10

25V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Specifications

Base-Emitter On Voltage (VBE(ON))
0.95 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Time Constant (rb'Cc)
9 ps
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Voltage (VCEO)
25 V
Common Base Feedback Capacitance (Crb)
0.65 pF
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
650 MHz
DC Current Gain (hFE)
60 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
3 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
0.7 pF
Power Dissipation
350 mW
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
357 °C/W
Thermal Resistance Junction-Case
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Active25V,50mA,350mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,500PBFREE

Resources

Recently Viewed