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MPSL51

100V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.2 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
100 V
Collector-Base Cutoff Current (ICBO)
1000 nA
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Collector Current
600 mA
Current Gain-Bandwidth Product (fT)
60 MHz
DC Current Gain (hFE)
40 — 250 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
4 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
8 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-55 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active100V,600mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox2,500LEAD or TINNo

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