PMD1603K
20A,100V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Specifications
Base-Emitter On Voltage (VBE(ON))
2.8 V
Base-Emitter Saturation Voltage (VBE(SAT))
2.8 V
Case Type
TO-3
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCER)
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICER)
7000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
500 mA
Continuous Collector Current
20 A
Current Gain-Bandwidth Product (fT)
4 MHz
DC Current Gain (hFE)
0.75 — 20 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
3000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 200 °C
Output Capacitance (Cob)
400 pF
Peak Collector Current
40 A
Power Dissipation
180 W
Small Signal Current Gain (hfe)
300 x10³
Storage Temperature (Tstg)
-65 — 200 °C
Thermal Resistance Junction-Case
0.97 K/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 20A,100V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | Sleeve | 20 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Cap and Assembly | Analytical Test Report |
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leads | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| PMD1600K-1700K.PDF | Device Datasheet |
| Material Composition:TO-3 | Material Composition |
| Package Detail Document:TO-3 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-3 Package Reliability | Product Reliability Data |