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PN3563

12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator

Specifications

Amplifier Power Gain (Gpe)
14 — 26 dB
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Time Constant (rb'Cc)
8 — 25 ps
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
12 V
Collector-Emitter Voltage (VCEO)
12 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
600 — 1500 MHz
DC Current Gain (hFE)
20 — 200 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
2 V
Emitter-Base Voltage
2 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
1.7 pF
Power Dissipation
1 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
20 — 250 x10³
Storage Temperature (Tstg)
-55 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,500LEAD or TINNo
Active12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,000PBFREE
Active12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorBox2,000PBFREE
Active12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF OscillatorTape & Reel2,000LEAD or TINNo

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