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PN3565

25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
3000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
350 mV
Collector-Emitter Voltage (VCEO)
25 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
40 — 240 MHz
DC Current Gain (hFE)
150 — 600 x10³
DC Current Gain (hFE)
70 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
6 V
Emitter-Base Voltage
6 V
HTS Code
8541.21.0075
Input Impedance Common Emitter (hie)
2 — 20 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Output Admittance Common Emitter (hoe)
0.5 — 100 µS
Output Capacitance (Cob)
4 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
120 — 750 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Discontinued25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo
Discontinued25V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,000PBFREE

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