No image available
PN3638A
25V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch
Specifications
Base-Emitter Saturation Voltage (VBE(SAT))
0.8 — 2 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
25 V
Collector-Base Voltage
25 V
Collector-Emitter Breakdown Voltage (BVCES)
25 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Cutoff Current (ICES)
0.035 µA
Collector-Emitter Cutoff Current (ICES)
2 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
25 V
Collector-Emitter Voltage (VCES)
25 V
Continuous Collector Current
800 mA
Current Gain-Bandwidth Product (fT)
150 MHz
DC Current Gain (hFE)
20 x10³
DC Current Gain (hFE)
100 x10³
DC Current Gain (hFE)
80 x10³
DC Current Gain (hFE)
100 x10³
Delay Time (td)
20 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Voltage
4.9 V
Fall Time (tf)
70 ns
HTS Code
8541.21.0075
Input Capacitance (Cib)
25 pF
Input Impedance Common Emitter (hie)
2 kΩ
Junction Temperature (Tj)
-55 — 150 °C
Output Admittance Common Emitter (hoe)
1.2 µS
Output Capacitance (Cob)
10 pF
Power Dissipation
625 mW
Rise Time (tr)
70 ns
Small Signal Current Gain (hfe)
100 x10³
Small Signal Current Gain (hfe)
1.5 x10³
Storage Temperature (Tstg)
-55 — 150 °C
Storage Time (ts)
140 ns
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W
Turn Off Time (toff)
170 ns
Turn On Time (ton)
75 ns
Voltage Feedback Ratio Common Emitter (hre)
1.5 x10⁻³
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 25V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Box | 2,500 | LEAD or TIN | No | |
| Active | 25V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Box | 2,000 | PBFREE | ||
| Active | 25V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Ammo | 2,000 | LEAD or TIN | No | |
| Active | 25V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Ammo | 2,000 | LEAD or TIN | No | |
| Active | 25V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Tape & Reel | 2,000 | LEAD or TIN | No | |
| Active | 25V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch | Tape & Reel | 2,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Copper Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| LSSGP076.PDF | Device Datasheet |
| Material Composition:TO-92 | Material Composition |
| Package Detail Document:TO-92 | Package Detail Document |
| Product Reliability Data:TO-92 Package Reliability | Product Reliability Data |