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PN4250A

60V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low Noise

Specifications

Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
60 V
Collector-Base Cutoff Current (ICBO)
10 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCES)
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
60 V
Collector-Emitter Voltage (VCES)
60 V
Continuous Collector Current
500 mA
DC Current Gain (hFE)
250 — 700 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Cutoff Current (IEBO)
20 nA
Emitter-Base Voltage
5 V
HTS Code
8541.21.0095
Input Impedance Common Emitter (hie)
6 — 20 kΩ
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
2 dB
Noise Figure (NF)
2 dB
Output Admittance Common Emitter (hoe)
5 — 50 µS
Output Capacitance (Cob)
6 pF
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
250 — 800 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
200 °C/W
Thermal Resistance Junction-Case
83.3 °C/W
Voltage Feedback Ratio Common Emitter (hre)
1 x10⁻³

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active60V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseBox2,500LEAD or TINNo
Active60V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseBox2,000PBFREE
Active60V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseAmmo2,000LEAD or TINNo
Active60V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Low NoiseTape & Reel2,000LEAD or TINNo

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