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PN4258

12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Saturated Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
1.5 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 0.95 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
12 V
Collector-Base Voltage
12 V
Collector-Emitter Breakdown Voltage (BVCES)
12 V
Collector-Emitter Breakdown Voltage (BVCEO)
12 V
Collector-Emitter Cutoff Current (ICES)
0.01 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
150 mV
Collector-Emitter Voltage (VCEO)
12 V
Collector-Emitter Voltage (VCES)
12 V
Continuous Collector Current
50 mA
Current Gain-Bandwidth Product (fT)
700 MHz
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
30 — 120 x10³
DC Current Gain (hFE)
15 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
3.5 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
3 pF
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
20 ns
Turn Off Time (toff)
20 ns
Turn On Time (ton)
15 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Saturated SwitchBox2,500PBFREE
Discontinued12V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP Saturated SwitchBox2,000PBFREE

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