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PN4274

12V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.74 — 1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.15 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.6 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.72 — 0.85 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
12 V
Collector-Emitter Cutoff Current (ICES)
0.4 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
180 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
500 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Voltage (VCEO)
12 V
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
400 MHz
DC Current Gain (hFE)
35 — 120 x10³
DC Current Gain (hFE)
18 x10³
DC Current Gain (hFE)
30 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4.5 V
Emitter-Base Voltage
4.5 V
HTS Code
8541.21.0075
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
4 pF
Peak Collector Current
500 mA
Power Dissipation
1 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-55 — 150 °C
Storage Time (ts)
13 ns
Turn Off Time (toff)
12 ns
Turn On Time (ton)
12 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active12V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated SwitchBox2,500LEAD or TINNo
Active12V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Saturated SwitchBox2,000PBFREE

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