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PN4917

30V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.9 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.75 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Time Constant (rb'Cc)
50 ps
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
30 V
Collector-Emitter Cutoff Current (ICES)
0.025 µA
Collector-Emitter Cutoff Current (ICES)
25 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
140 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
300 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
130 mV
Collector-Emitter Voltage (VCEO)
30 V
Continuous Collector Current
100 mA
Current Gain-Bandwidth Product (fT)
450 MHz
DC Current Gain (hFE)
150 x10³
DC Current Gain (hFE)
150 — 300 x10³
DC Current Gain (hFE)
30 x10³
DC Current Gain (hFE)
100 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
5 V
Emitter-Base Voltage
5 V
HTS Code
8541.21.0075
Input Capacitance (Cib)
8 pF
Junction Temperature (Tj)
-65 — 150 °C
Noise Figure (NF)
4 dB
Noise Figure (NF)
3 dB
Noise Figure (NF)
3 dB
Noise Figure (NF)
6 dB
Output Capacitance (Cob)
4.5 pF
Power Dissipation
1.5 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
150 ns
Turn On Time (ton)
40 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active30V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchBox2,500LEAD or TINNo
Active30V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchAmmo2,000LEAD or TINNo
Active30V,100mA,625mW Through-Hole Transistor-Small Signal (<=1A) PNP General Purpose Amplifier/SwitchTape & Reel2,000LEAD or TINNo

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