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PN5033
.3V,2.5V,10mA,310mW Through-Hole JFET P Channel
Specifications
Case Type
TO-92
Common Source Input Capacitance (Ciss)
20 pF
Common Source Reverse Transfer Capacitance (Crss)
7 pF
Continuous Gate Current
10 mA
Drain-Gate Voltage
10 V
Drain-Source Voltage
10 V
ECCN Code
EAR99
Equivalent Input Noise Voltage (eN)
100 nV/√Hz
Forward Transconductance (gFS)
1 — 5 mS
Gate Leakage Current (IGSS)
10 nA
Gate-Source Breakdown Voltage (BVGSS)
10 V
Gate-Source Cutoff Voltage (VGS(OFF))
0.3 — 2.5 V
Gate-Source Voltage (VGS)
10 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Power Dissipation
310 mW
Saturation Drain Current (IDSS)
300 — 3500 µA
Storage Temperature (Tstg)
-65 — 150 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | .3V,2.5V,10mA,310mW Through-Hole JFET P Channel | Box | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Copper Bonding Wire | Analytical Test Report |
| Analytical Test Report:Copper Wire | Analytical Test Report |
| Analytical Test Report:Epoxy Adhesive | Analytical Test Report |
| Analytical Test Report:Green Epoxy Molding Compound | Analytical Test Report |
| Analytical Test Report:Halogen Free | Analytical Test Report |
| Analytical Test Report:Lead Frame | Analytical Test Report |
| Analytical Test Report:Pure Tin Solder, Sn | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| PN5033.PDF | Device Datasheet |
| Material Composition:TO-92 | Material Composition |
| Package Detail Document:TO-92 | Package Detail Document |
| Process Change Notice:P-CHANNEL JFETS | Process Change Notice |
| Product Reliability Data:TO-92 Package Reliability | Product Reliability Data |