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PN5133

18V,10mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low Noise

Specifications

Base-Emitter On Voltage (VBE(ON))
0.75 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
20 V
Collector-Base Cutoff Current (ICBO)
5000 nA
Collector-Base Cutoff Current (ICBO)
50 nA
Collector-Base Voltage
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
18 V
Collector-Emitter Saturation Voltage (VCE(SAT))
400 mV
Collector-Emitter Voltage (VCEO)
18 V
Continuous Collector Current
10 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
60 — 1000 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
50 nA
Emitter-Base Voltage
3 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-55 — 150 °C
Output Capacitance (Cob)
5 pF
Power Dissipation
1 W
Power Dissipation
625 mW
Small Signal Current Gain (hfe)
50 — 1100 x10³
Storage Temperature (Tstg)
-55 — 150 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active18V,10mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN Low NoiseBox2,500LEAD or TINNo

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