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PN5134

10V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter Saturation Voltage (VBE(SAT))
0.72 — 1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
0.7 — 0.9 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
20 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Voltage
20 V
Collector-Emitter Breakdown Voltage (BVCES)
20 V
Collector-Emitter Breakdown Voltage (BVCEO)
10 V
Collector-Emitter Cutoff Current (ICES)
0.4 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
200 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
10 V
Continuous Collector Current
500 mA
DC Current Gain (hFE)
20 — 150 x10³
DC Current Gain (hFE)
15 x10³
Delay Time (td)
14 ns
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3.5 V
Emitter-Base Voltage
3.5 V
Fall Time (tf)
13 ns
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
4 pF
Power Dissipation
625 mW
Rise Time (tr)
12 ns
Small Signal Current Gain (hfe)
2.5 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Storage Time (ts)
13 ns
Thermal Resistance Junction-Ambient
200 °C/W
Turn Off Time (toff)
18 ns
Turn On Time (ton)
18 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active10V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500LEAD or TINNo
Active10V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,000PBFREE

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