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PN5135

25V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
300 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
25 V
Collector-Emitter Saturation Voltage (VCE(SAT))
1000 mV
Collector-Emitter Voltage (VCEO)
25 V
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current
200 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
50 — 600 x10³
DC Current Gain (hFE)
15 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
4 V
Emitter-Base Cutoff Current (IEBO)
10000 nA
Emitter-Base Voltage
4 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
25 pF
Power Dissipation
1 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
0.2 K/W
Thermal Resistance Junction-Case
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active25V,200mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500LEAD or TINNo

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