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PN5137

20V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.1 V
Base-Emitter Saturation Voltage (VBE(SAT))
1.1 V
Case Type
TO-92
Collector-Base Breakdown Voltage (BVCBO)
30 V
Collector-Base Cutoff Current (ICBO)
10000 nA
Collector-Base Cutoff Current (ICBO)
100 nA
Collector-Base Voltage
30 V
Collector-Emitter Breakdown Voltage (BVCES)
30 V
Collector-Emitter Breakdown Voltage (BVCEO)
20 V
Collector-Emitter Saturation Voltage (VCE(SAT))
250 mV
Collector-Emitter Voltage (VCEO)
20 V
Collector-Emitter Voltage (VCES)
30 V
Continuous Collector Current
500 mA
Current Gain-Bandwidth Product (fT)
40 MHz
DC Current Gain (hFE)
20 — 400 x10³
DC Current Gain (hFE)
20 x10³
ECCN Code
EAR99
Emitter-Base Breakdown Voltage (BVEBO)
3 V
Emitter-Base Cutoff Current (IEBO)
100 nA
Emitter-Base Voltage
3 V
HTS Code
8541.21.0095
Input Capacitance (Cib)
85 pF
Junction Temperature (Tj)
-65 — 150 °C
Output Capacitance (Cob)
35 pF
Power Dissipation
1 W
Power Dissipation
625 mW
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
0.2 K/W
Thermal Resistance Junction-Case
125 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTerminationvariant_ncnr
Active20V,500mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/SwitchBox2,500LEAD or TINNo

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