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AEM

TIP130

8A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington

Specifications

Base-Emitter On Voltage (VBE(ON))
2.5 V
Case Type
TO-220
Collector-Base Cutoff Current (ICBO)
200000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
500 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
300 mA
Continuous Collector Current
8 A
DC Current Gain (hFE)
1 — 15 x10³
DC Current Gain (hFE)
500 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
5000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
12 A
Power Dissipation
70 W
Power Dissipation
2 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Ambient
63.5 °C/W
Thermal Resistance Junction-Case
1.78 °C/W

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued8A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN DarlingtonSleeve50PBFREE

Resources

ItemType
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
LSSGP094.PDFDevice Datasheet
Material Composition:TO-220Material Composition
Package Detail Document:TO-220Package Detail Document
Product EOL Notice:TIP130 SeriesProduct EOL Notice
Product Reliability Data:TO-220 Package ReliabilityProduct Reliability Data

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