TIP140
10A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington
Specifications
Base-Emitter On Voltage (VBE(ON))
3 V
Case Type
TO-218
Collector-Base Cutoff Current (ICBO)
1000000 nA
Collector-Base Voltage
60 V
Collector-Emitter Breakdown Voltage (BVCEO)
60 V
Collector-Emitter Cutoff Current (ICEO)
2000 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
3000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
2000 mV
Collector-Emitter Voltage (VCEO)
60 V
Continuous Base Current
500 mA
Continuous Collector Current
10 A
DC Current Gain (hFE)
500 x10³
DC Current Gain (hFE)
1000 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
2000000 nA
Emitter-Base Voltage
5 V
Forward Voltage (VF)
2.8 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
20 A
Power Dissipation
125 W
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
1 °C/W
Turn Off Time (toff)
4000 ns
Turn On Time (ton)
900 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 10A,60V Through-Hole Transistor-Bipolar Power (>1A) NPN Darlington | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| TIP140-TIP142.PDF | Device Datasheet |
| Product EOL Notice:TO-218 CASE | Product EOL Notice |