TIP29C
100V,1A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
1.3 V
Case Type
TO-220
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
300 µA
Collector-Emitter Cutoff Current (ICES)
200 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
400 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
15 — 75 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
3 A
Power Dissipation
30 W
Power Dissipation
2 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
2000 ns
Turn On Time (ton)
500 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Discontinued | 100V,1A,2W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Sleeve | 50 | TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Die Attach | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| Analytical Test Report:Tin Plating | Analytical Test Report |
| TIP29.PDF | Device Datasheet |
| Material Composition:TO-220 | Material Composition |
| Package Detail Document:TO-220 | Package Detail Document |
| Product EOL Notice:Power transistors bare die and | Product EOL Notice |
| Product Reliability Data:TO-220 Package Reliability | Product Reliability Data |