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AEM

TIP30

40V,1A,2W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/Switch

Specifications

Base-Emitter On Voltage (VBE(ON))
1.3 V
Case Type
TO-220
Collector-Base Voltage
40 V
Collector-Emitter Breakdown Voltage (BVCEO)
40 V
Collector-Emitter Cutoff Current (ICEO)
300 µA
Collector-Emitter Cutoff Current (ICES)
200 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
700 mV
Collector-Emitter Voltage (VCEO)
40 V
Continuous Base Current
400 mA
Continuous Collector Current
1 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
15 — 75 x10³
DC Current Gain (hFE)
40 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
3 A
Power Dissipation
30 W
Power Dissipation
2 W
Small Signal Current Gain (hfe)
20 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Turn Off Time (toff)
1000 ns
Turn On Time (ton)
300 ns

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued40V,1A,2W Through-Hole Transistor-Bipolar Power (>1A) PNP General Purpose Amplifier/SwitchSleeve50PBFREE

Resources

ItemType
Analytical Test Report:Die AttachAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
Analytical Test Report:Tin PlatingAnalytical Test Report
TIP30.PDFDevice Datasheet
Material Composition:TO-220Material Composition
Package Detail Document:TO-220Package Detail Document
Product EOL Notice:TIP30Product EOL Notice
Product Reliability Data:TO-220 Package ReliabilityProduct Reliability Data

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