TIP35C
100V,25A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch
Specifications
Base-Emitter On Voltage (VBE(ON))
4.5 V
Base-Emitter On Voltage (VBE(ON))
2 V
Case Type
TO-218
Collector-Base Voltage
100 V
Collector-Emitter Breakdown Voltage (BVCEO)
100 V
Collector-Emitter Cutoff Current (ICEO)
1000 µA
Collector-Emitter Cutoff Current (ICES)
700 µA
Collector-Emitter Saturation Voltage (VCE(SAT))
4000 mV
Collector-Emitter Saturation Voltage (VCE(SAT))
1800 mV
Collector-Emitter Voltage (VCEO)
100 V
Continuous Base Current
5 A
Continuous Collector Current
25 A
Current Gain-Bandwidth Product (fT)
3 MHz
DC Current Gain (hFE)
10 — 100 x10³
DC Current Gain (hFE)
25 x10³
ECCN Code
EAR99
Emitter-Base Cutoff Current (IEBO)
1000000 nA
Emitter-Base Voltage
5 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-65 — 150 °C
Peak Collector Current
40 A
Power Dissipation
125 W
Small Signal Current Gain (hfe)
25 x10³
Storage Temperature (Tstg)
-65 — 150 °C
Thermal Resistance Junction-Case
1 °C/W
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 100V,25A,125W Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch | Box | 100 | PBFREE |
Resources
| Item | Type |
|---|---|
| TIP35.PDF | Device Datasheet |
| Product EOL Notice:TO-218 CASE | Product EOL Notice |