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AEM

Advanced WBG semiconductors designed for your most demanding power systems

As power systems push the limits of size and heat, traditional silicon often falls short. Wide Bandgap (WBG) technology represents a paradigm shift, enabling semiconductor devices to operate at significantly higher voltages, temperatures, and switching frequencies than ever before. By reducing energy loss and thermal footprints, WBG components allow for smaller, lighter, and more efficient system designs.

To meet these evolving challenges, we offer a robust portfolio of Silicon Carbide (SiC) and Gallium Nitride (GaN) technologies. From high-performance rectifiers to advanced FETs and MOSFETs, our WBG solutions are engineered to help you achieve unprecedented power density and industry-leading energy efficiency.

N-Ch GaN FETs

Gallium Nitride (GaN) N-Channel FETs combine high voltage capability with low rDS(ON) and are designed for soft-switching applications with high efficiency standards. The space-saving DFN and chip scale packaging is ideal for application in high power wireless charging, Power Factor Correction (PFC), and electric vehicle inverters.

N-Ch SiC MOSFETS

These N-channel silicon carbide (SiC) MOSFETs are designed for high-speed switching applications that require low conduction losses. It demonstrates consistent performance across the broad operating temperature range of -55°C to +175°C for both DC and dynamic characteristics, featuring low power loss under high temperature.

Features

  • High voltage capability
  • Low gate charge & rDS(ON) as low as 3.2mΩ
  • Efficient fast switching

Benefits

  • Minimal power loss in conduction
  • High frequency switching capability
  • No reverse recovery loss

Features

  • Industry leading edge sub 20 mom on-resistance
  • Low switching loss & high blocking voltage across the full temp range
  • Packaged current rating as high as 80A & power rating over 25W

Benefits

  • High reliability across industrial applications
  • Enhanced switching speeds versus silicon
  • Insulated mounting tab
  • Industry standard package

Explore our line of GaN FETs

Explore our line of SiC MOSFETs