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AEM

1N3070

200mA,175V Through-Hole Diode-Switching Single

Specifications

Average Forward Current
200 mA
Case Type
DO-35
Continuous Forward Current
500 mA
Continuous Reverse Voltage
175 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.90.0000
Junction Capacitance (CJ)
5 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Forward Surge Current
1 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
175 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
200 V
Reverse Recovery Time (trr)
50 ns
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 200 °C

Product Options

PartStatusDescriptionPackaging CodePackaging QtyTermination
Discontinued, Stock Only200mA,175V Through-Hole Diode-Switching SingleBox2,500PBFREE

Resources

ItemType
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:LeadframeAnalytical Test Report
Analytical Test Report:Sn PlatingAnalytical Test Report
1N3070.PDFDevice Datasheet
Material Composition:DO-35Material Composition
Package Detail Document:DO-35Package Detail Document
Product Reliability Data:DO-35 Package ReliabilityProduct Reliability Data

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