1N4150
200mA,50V Through-Hole Diode-Switching Single
Specifications
Average Forward Current
200 mA
Case Type
DO-35
Continuous Forward Current
400 mA
ECCN Code
EAR99
Forward Recovery Time (tfr)
10 ns
Forward Voltage (VF)
0.66 — 0.74 V
Forward Voltage (VF)
0.76 — 0.86 V
Forward Voltage (VF)
0.82 — 0.92 V
Forward Voltage (VF)
0.87 — 1 V
Forward Voltage (VF)
0.54 — 0.62 V
HTS Code
8541.10.0070
Junction Capacitance (CJ)
2.5 pF
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Forward Surge Current
1 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
50 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
75 V
Reverse Recovery Time (trr)
4 ns
Reverse Recovery Time (trr)
6 ns
Reverse Recovery Time (trr)
4 ns
Reverse Voltage Leakage Current (IR)
100 µA
Reverse Voltage Leakage Current (IR)
0.1 µA
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination | variant_ncnr |
|---|---|---|---|---|---|---|
| Active | 200mA,50V Through-Hole Diode-Switching Single | Box | 2,500 | PBFREE | ||
| Special Order Item | 200mA,50V Through-Hole Diode-Switching Single | Tape & Reel | 10,000 | LEAD or TIN | No |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 1N3600.PDF | Device Datasheet |
| Material Composition:DO-35 | Material Composition |
| Package Detail Document:DO-35 | Package Detail Document |
| Process Change Notice:DO-35 Alternate Marking | Process Change Notice |
| Product Reliability Data:DO-35 Package Reliability | Product Reliability Data |