1N485B
200mA,200V Through-Hole Diode-Low Leakage Single
Specifications
Average Forward Current
200 mA
Case Type
DO-35
Continuous Forward Current
500 mA
Continuous Reverse Voltage
180 V
ECCN Code
EAR99
Forward Voltage (VF)
1 V
HTS Code
8541.10.0070
Junction Temperature (Tj)
-65 — 200 °C
Peak Forward Surge Current
4 A
Peak Forward Surge Current
1 A
Peak Repetitive Forward Current
600 mA
Peak Repetitive Reverse Voltage
200 V
Power Dissipation
500 mW
Reverse Breakdown Voltage (BVR)
200 V
Reverse Voltage Leakage Current (IR)
5 µA
Reverse Voltage Leakage Current (IR)
0.025 µA
Storage Temperature (Tstg)
-65 — 200 °C
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Discontinued | 200mA,200V Through-Hole Diode-Low Leakage Single | Box | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 1N485B.PDF | Device Datasheet |
| Material Composition:DO-35 | Material Composition |
| Package Detail Document:DO-35 | Package Detail Document |
| Product EOL Notice:1N485B AND 1N486B | Product EOL Notice |
| Product Reliability Data:DO-35 Package Reliability | Product Reliability Data |