1N5526B
6.8V,400mW Through-Hole Diode-Zener Single: Low Level
Specifications
Case Type
DO-35
ECCN Code
EAR99
Forward Voltage (VF)
1.1 V
HTS Code
8541.10.0050
Junction Temperature (Tj)
-65 — 200 °C
Maximum Temperature Coefficient (ΘVZ)
0.052 %/°C
Power Dissipation
400 mW
Reverse Voltage Leakage Current (IR)
1 µA
Storage Temperature (Tstg)
-65 — 200 °C
Zener Impedance (ZZT)
30 Ω
Zener Voltage (VZ)
6.46 — 7.14 V(6.8 V Typical)
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 6.8V,400mW Through-Hole Diode-Zener Single: Low Level | Box | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Leadframe | Analytical Test Report |
| Analytical Test Report:Sn Plating | Analytical Test Report |
| 1N5518B-5546B.PDF | Device Datasheet |
| Material Composition:DO-35 | Material Composition |
| Package Detail Document:DO-35 | Package Detail Document |
| Process Change Notice:DO-35 Alternate Marking | Process Change Notice |
| Product Reliability Data:DO-35 Package Reliability | Product Reliability Data |