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CCSPG0420N
20A,40V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
CSP2X2
Common Source Input Capacitance (Ciss)
886.5 pF
Common Source Output Capacitance (Coss)
381.2 pF
Common Source Reverse Transfer Capacitance (Crss)
226.4 pF
Continuous Drain Current
20 A
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage
40 V
ECCN Code
EAR99
Gate Leakage Current, Reverse (IGSSR)
40000 nA
Gate Leakage Current, Reverse (IGSSR)
30000 nA
Gate Threshold Voltage (VGS(th))
0.8 — 2.4 V
Gate-Drain Charge (Qgd)
8.6 nC
Gate-Source Charge (Qgs)
1.9 nC
Gate-Source Voltage (VGS)
6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-40 — 125 °C
Maximum Pulsed Drain Current
100 A
Saturation Drain Current (IDSS)
20 µA
Static Drain-Source On Resistance (rDS(ON))
0.0048 Ω
Storage Temperature (Tstg)
-40 — 125 °C
Total Gate Charge (Qg)
15.8 nC
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 20A,40V Surface mount MOSFET N-Channel GaN | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CCSPG0420N_.PDF | Device Datasheet |
| Package Detail Document:CSP2X2 TR | Package Detail Document |
| Product Brief:New GaN FETs | Product Brief |