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CCSPG0450N
50A,40V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
CSP5X4
Common Source Input Capacitance (Ciss)
3500 pF
Common Source Output Capacitance (Coss)
1600 pF
Common Source Reverse Transfer Capacitance (Crss)
100 pF
Continuous Drain Current
50 A
Diode Forward On Voltage (VSD)
1.25 V
Drain-Source Breakdown Voltage (BVDSS)
40 V
Drain-Source Voltage
40 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Coss(er))
2500 pF
Effective Output Capacitance, Time Related (Coss(tr))
2900 pF
Gate Leakage Current, Forward (IGSSF)
800000 nA
Gate Leakage Current, Reverse (IGSSR)
400000 nA
Gate Threshold Voltage (VGS(th))
0.7 — 2.3 V(1.1 V Typical)
Gate-Drain Charge (Qgd)
4.6 nC
Gate-Source Charge (Qgs)
6.2 nC
Gate-Source Voltage (VGS)
-4 — 6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-40 — 150 °C
Maximum Pulsed Drain Current
200 A
Saturation Drain Current (IDSS)
900 µA
Static Drain-Source On Resistance (rDS(ON))
0.0015 Ω
Storage Temperature (Tstg)
-40 — 150 °C
Total Gate Charge (Qg)
28 nC
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 50A,40V Surface mount MOSFET N-Channel GaN | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CCSPG0450N_.PDF | Device Datasheet |
| Package Detail Document:CSP5X4 TR | Package Detail Document |
| Product Brief:New GaN FETs | Product Brief |