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CCSPG1060N
60A,100V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
CSP3.5X2
Common Source Input Capacitance (Ciss)
1000 pF
Common Source Output Capacitance (Coss)
460 pF
Common Source Reverse Transfer Capacitance (Crss)
8.2 pF
Continuous Drain Current
60 A
Diode Forward On Voltage (VSD)
2.3 V
Drain-Source Breakdown Voltage (BVDSS)
100 V
Drain-Source Voltage
100 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Coss(er))
700 pF
Effective Output Capacitance, Time Related (Coss(tr))
1020 pF
Gate Leakage Current, Forward (IGSSF)
5000000 nA
Gate Leakage Current, Reverse (IGSSR)
400000 nA
Gate Threshold Voltage (VGS(th))
0.8 — 2.5 V(1.1 V Typical)
Gate-Drain Charge (Qgd)
1.9 nC
Gate-Source Charge (Qgs)
1.7 nC
Gate-Source Voltage (VGS)
-4 — 6 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-40 — 150 °C
Power Dissipation
1.1 W
Saturation Drain Current (IDSS)
350 µA
Static Drain-Source On Resistance (rDS(ON))
0.0055 Ω
Storage Temperature (Tstg)
-40 — 150 °C
Total Gate Charge (Qg)
9.2 nC
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 60A,100V Surface mount MOSFET N-Channel GaN | Box | 500 | PBFREE | |
| Active | 60A,100V Surface mount MOSFET N-Channel GaN | Tape & Reel | 1,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CCSPG1060N_.PDF | Device Datasheet |
| Material Composition:CSP3.5X2 | Material Composition |
| Package Detail Document:CSP3.5X2 TR | Package Detail Document |
| Product Brief:New GaN FETs | Product Brief |
| Spice Model:CCSPG1060N | Spice Model |
| Step File 3D Object:CSP3.5X2 Case | Step File 3D Object |