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CCSPG1510N
100A,150V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
CSP4X6
Common Source Input Capacitance (Ciss)
2200 pF
Common Source Output Capacitance (Coss)
900 pF
Common Source Reverse Transfer Capacitance (Crss)
10.5 pF
Continuous Drain Current
100 A
Diode Forward On Voltage (VSD)
1.5 V
Drain-Source Breakdown Voltage (BVDSS)
150 V
Drain-Source Voltage
150 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Coss(er))
1300 pF
Effective Output Capacitance, Time Related (Coss(tr))
1700 pF
Gate Leakage Current, Forward (IGSSF)
1000000 nA
Gate Leakage Current, Forward (IGSSF)
100000 nA
Gate Leakage Current, Reverse (IGSSR)
100000 nA
Gate Resistance (RG)
2 Ω
Gate Threshold Voltage (VGS(th))
0.8 — 2.1 V(1.1 V Typical)
Gate-Drain Charge (Qgd)
3.5 nC
Gate-Source Charge (Qgs)
5 nC
Gate-Source Voltage (VGS)
-4 — 6 V
HTS Code
8541.21.0095
Junction Temperature (Tj)
-40 — 150 °C
Output Charge (Qoss)
130 nC
Power Dissipation
200 mW
Saturation Drain Current (IDSS)
150 µA
Static Drain-Source On Resistance (rDS(ON))
0.0039 Ω
Storage Temperature (Tstg)
-40 — 150 °C
Threshold Gate Charge (QG(TH))
3 nC
Total Gate Charge (Qg)
20 nC
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 100A,150V Surface mount MOSFET N-Channel GaN | Box | 500 | PBFREE | |
| Active | 100A,150V Surface mount MOSFET N-Channel GaN | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CCSPG1510N_.PDF | Device Datasheet |
| Package Detail Document:CSP4X6 | Package Detail Document |
| Product Brief:New GaN FETs | Product Brief |
| Spice Model:CCSPG1510N | Spice Model |