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CDF56G6511N
11.5A,650V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
DFN5X6A
Common Source Input Capacitance (Ciss)
96 pF
Common Source Output Capacitance (Coss)
30 pF
Common Source Reverse Transfer Capacitance (Crss)
0.5 pF
Continuous Drain Current
11.5 A
Diode Forward On Voltage (VSD)
2.6 V
Drain-Source Breakdown Voltage (BVDSS)
650 V
Drain-Source Voltage
650 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Coss(er))
43 pF
Effective Output Capacitance, Time Related (Coss(tr))
60 pF
Fall Time (tf)
4 ns
Gate Leakage Current, Forward (IGSSF)
60000 nA
Gate Leakage Current, Reverse (IGSSR)
60000 nA
Gate Threshold Voltage (VGS(th))
1.2 — 2.5 V(1.7 V Typical)
Gate-Drain Charge (Qgd)
1.1 nC
Gate-Source Charge (Qgs)
0.25 nC
Gate-Source Voltage (VGS)
-1.4 — 7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 150 °C
Maximum Pulsed Drain Current
20.5 A
Power Dissipation
84 W
Power Dissipation
1.1 W
Rise Time (tr)
4 ns
Saturation Drain Current (IDSS)
20 µA
Static Drain-Source On Resistance (rDS(ON))
0.19 Ω
Storage Temperature (Tstg)
-55 — 150 °C
Total Gate Charge (Qg)
2.8 nC
Turn-off Delay Time (tOFF)
1.7 ns
Turn-on Delay Time (tON)
1.4 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 11.5A,650V Surface mount MOSFET N-Channel GaN | Box | 200 | PBFREE | |
| Active | 11.5A,650V Surface mount MOSFET N-Channel GaN | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CDF56G6511N.PDF | Device Datasheet |
| Material Composition:DFN5X6A | Material Composition |
| Package Detail Document:DFN5X6A | Package Detail Document |
| Product Brief:New GaN FETs | Product Brief |
| Spice Model:CDF56G6511N | Spice Model |