No image available
CDF56G7032N
18A,700V Surface mount MOSFET N-Channel GaN
Specifications
Case Type
DFN5X6A
Common Source Input Capacitance (Ciss)
125 pF
Common Source Output Capacitance (Coss)
41 pF
Common Source Reverse Transfer Capacitance (Crss)
0.4 pF
Continuous Drain Current
18 A
Diode Forward On Voltage (VSD)
2.4 V
Drain-Source Breakdown Voltage (BVDSS)
700 V
Drain-Source Voltage
700 V
ECCN Code
EAR99
Effective Output Capacitance, Energy Related (Co(er))
59 pF
Effective Output Capacitance, Time Related (Co(tr))
82 pF
Fall Time (tf)
6 ns
Gate Leakage Current, Forward (IGSSF)
70000 nA
Gate Leakage Current, Reverse (IGSSR)
70000 nA
Gate Resistance (RG1)
5 Ω
Gate Resistance (RG2)
6 Ω
Gate Threshold Voltage (VGS(th))
1.2 — 2.5 V(1.7 V Typical)
Gate-Drain Charge (Qgd)
1.2 nC
Gate-Source Charge (Qgs)
0.3 nC
Gate-Source Voltage (VGS)
-6 — 7 V
HTS Code
8541.29.0055
Junction Temperature (Tj)
-55 — 155 °C
Maximum Pulsed Drain Current
32 A
Output Charge (Qoss)
33 nC
Power Dissipation
113 W
Power Dissipation
1.1 W
Rise Time (tr)
5 ns
Saturation Drain Current (IDSS)
25 µA
Static Drain-Source On Resistance (rDS(ON))
0.14 Ω
Storage Temperature (Tstg)
-55 — 155 °C
Total Gate Charge (Qg)
3.5 nC
Turn-off Delay Time (tOFF)
4 ns
Turn-on Delay Time (tON)
3 ns
Product Options
| Part | Status | Description | Packaging Code | Packaging Qty | Termination |
|---|---|---|---|---|---|
| Active | 18A,700V Surface mount MOSFET N-Channel GaN | Box | 200 | PBFREE | |
| Active | 18A,700V Surface mount MOSFET N-Channel GaN | Tape & Reel | 2,500 | PBFREE |
Resources
| Item | Type |
|---|---|
| CDF56G7032N_.PDF | Device Datasheet |
| Material Composition:DFN5X6A | Material Composition |
| Package Detail Document:DFN5X6A | Package Detail Document |
| Product Brief:New GaN FETs | Product Brief |
| Spice Model:CDF56G7032N | Spice Model |